 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM MOSFET Module N-Channel Enhancement Mode VMO 650-01F VDSS = 100 V = 690 A ID25 RDS(on) = 1.8 mW D G E 72873 G S S D KS Preliminary Data KS Symbol VDSS VDGR VGS VGSM ID25 ID80 IDM PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 10 kW Continuous Transient TS = 25C TS = 80C TS = 25C TC = 25C TS = 25C pulse width limited by TJM Maximum Ratings 100 100 20 30 690 520 2780 2500 1740 -40 ...+150 150 -40 ... +125 V V V V A A A W W C C C V~ D = Drain S = Source KS = Kelvin Source G = Gate Features q q q q 50/60 Hz IISOL 1 mA t = 1 min t=1s 3000 3600 q q International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive Mounting torque (M6) Terminal connection torque (M5) typical including screws 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. Applications 250 g q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 3 6 V V q q q AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 7 mA VDS = 20 V, ID = 130 mA VGS = 20 V DC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 25C TJ = 125C Advantages q q 500 nA 3.5 mA 14 mA 1.8 mW q q Easy to mount Space and weight savings High power density Low losses VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 750 VMO 650-01F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 390 59 VGS = 0 V, VDS = 25 V, f = 1 MHz 20.8 10.4 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (external) 500 800 200 2300 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 455 1110 S nF nF nF ns ns ns ns nC nC nC 0.048 K/W with 30 mm heat transfer paste 0.072 K/W Dimensions in mm (1 mm = 0.0394") 5 gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthJS VDS = 10 V; ID = 0.5 * ID25 pulsed Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 690 2760 0.9 1.2 A A V Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 1000 A/ms, VDS = 0.5 * VDSS 300 ns IXYS MOSFETs and All rights reserved (c) 2000 IXYS IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
Price & Availability of VMO650-01F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |